Paper on the growth of antimony telluride by molecular beam epitaxy

Members of NAME have performed a materials investigation into the properties of antimony telluride films, grown by molecular beam epitaxy (MBE) as the temperature of an antimony cracking zone was varied. Through x-ray diffraction, magnetotransport studies, and examination using transmission electron microscopy, we find that as the cracker temperature is increased, the formation of defects is suppressed, due to the higher surface mobilities of the smaller antimony molecular species. This work has been published in Physical Review Materials and highlights the importance of using a cracker cell and its optimization for the growth of high quality MBE grown films of Sb2⁢Te3.

’Optimization of the growth of Sb2⁢Te3 by MBE using thermally cracked Sb’
Craig S. Knox, Ahmet Yagmur, Joel J. Burton, Zabeada Aslam, Philippa M. Shepley, John Harrington, Edmund H. Linfield, Joshua R. Freeman, and Satoshi Sasaki
Phys. Rev. Materials 9, L111202 – Published 19 November, 2025
DOI: https://doi.org/10.1103/69xs-pvg1